Pattern forming method, underlayer film forming composition,...

Details Pattern forming method, underlayer film forming composition,... Pattern forming method, underlayer film forming composition,...

2007-11-27

2007-11-27

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S431000, C438S710000, C430S310000

Reexamination Certificate

active

11270621

ABSTRACT:
According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

REFERENCES:
patent: 4701423 (1987-10-01), Szluk
patent: 6420271 (2002-07-01), Sato et al.
patent: 6566180 (2003-05-01), Park et al.
patent: 6576562 (2003-06-01), Ohuchi et al.
patent: 6853520 (2005-02-01), Fukuzawa et al.
patent: 2004/0224512 (2004-11-01), Sato et al.
patent: 2002-198295 (2002-07-01), None

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