Chevron CMOS trigate structure

Details Chevron CMOS trigate structure Chevron CMOS trigate structure

2007-06-12

2007-06-12

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S308000, C257S722000, C257SE21014

Reexamination Certificate

active

11161623

ABSTRACT:
Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to the processes used to form fins with different crystalline orientations on the same substrate, one of the MOSFETs has a fin with a lower mobility top surface. To inhibit inversion of the top surface, this MOSFET has a gate dielectric layer with a thicker region on the top surface than it does on the opposing sidewall surfaces. Additionally, several techniques for forming the thicker region of the gate dielectric layer are also disclosed.

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Doyle, et al., “Tri-Gate Fully-Depleted CMOS Transistors: Fabrication, Design & Layout,” 2003 Symposium on VLSI Technology Digest of Technical Papers, Jun. 10-12, 2003, pp. 133-134.
Stadele et al., “A Comprehensive Study of Corner Effects in Tri-Gate Transistors,” Solid-State Device Research Conference 2004, ESSDERC 2004, Sep. 21-23, 2004, pp. 165-168.

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