Non-single-crystal light emitting semiconductor device

Details Non-single-crystal light emitting semiconductor device Non-single-crystal light emitting semiconductor device

1982-02-09

1985-07-02

James, Andrew J.

357 2, 357 45, 357 59, H01L 3300

Patent

active

045271798

ABSTRACT:
A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the second semiconductor layer, or a first non-single-crystal semiconductor layer, many second non-single-crystal semiconductor layers formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the first semiconductor layer to cover the second semiconductor layers. The first and second semiconductor layers have either one or the other of p and n conductivity types, respectively. Semiconductors of the first, second and third layers are each doped with a dangling bond and recombination center neutralizer. The semiconductor of the second layer has a smaller energy gap than the semiconductors of the first and third layers.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4409605 (1983-10-01), Ovshinsky et al.

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