Method of converting contents of flash memory cells in the...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185300, C365S185330, C365S185290, C365S185220

Reexamination Certificate

active

11215259

ABSTRACT:
An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any pre-programming operation is performed.

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