Semiconductor device, and control method and device for...

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Reexamination Certificate

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C250S371000, C250S395000, C250S473100

Reexamination Certificate

active

10936127

ABSTRACT:
A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to ½, and preferably less than or equal to ⅕ of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.

REFERENCES:
patent: 5818075 (1998-10-01), Kawamoto et al.
patent: 6952228 (2005-10-01), Yoneda et al.
patent: 2003087662 (2003-03-01), None
patent: 2005148522 (2005-06-01), None

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