Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-08-28
2007-08-28
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S533000, C257S516000
Reexamination Certificate
active
11014142
ABSTRACT:
A semiconductor integrated circuit includes an inductor formed by a conductive loop that is fabricated on one or more metal layers. The inductor also includes a dielectric region provided adjacent to the conductive loop. The semiconductor integrated circuit may also include a pattern of electrically isolated metallic fill structures formed within the dielectric region.
REFERENCES:
patent: 6310387 (2001-10-01), Seefeldt et al.
patent: 6429504 (2002-08-01), Beaussart et al.
patent: 6784518 (2004-08-01), Merckel et al.
patent: 2002/0084509 (2002-07-01), Ballantine et al.
patent: 2005/0073025 (2005-04-01), Hashizume et al.
patent: 2005/0190035 (2005-09-01), Wang
Jackson Jerome
Nguyen Joseph
NXP B.V.
Zawilski Peter
LandOfFree
Fill structures for use with a semiconductor integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fill structures for use with a semiconductor integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fill structures for use with a semiconductor integrated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3839202