Solid state image sensor including transparent film layers...

Details Solid state image sensor including transparent film layers... Solid state image sensor including transparent film layers...

2007-11-13

2007-11-13

Le, Que T (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S239000

Reexamination Certificate

active

11336712

ABSTRACT:
Light incident on a microlens at a large incident angle can be efficiently guided to a photo-electric converting portion in a solid state image sensor. In a solid state image sensor having a plurality of pixels, each of the plurality of pixels includes a microlens which condenses light, a photo-electric converting portion which photoelectrically converts light condensed by the microlens, a metal electrode layer which is interposed between the microlens and the photo-electric converting portion and has an opening at a position corresponding to the optical path of light traveling from the microlens toward the photo-electric converting portion, and a transparent film layer which is interposed between the microlens and the photo-electric converting portion and has a convex lens-shaped portion that is convex on the microlens side.

REFERENCES:
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 11-274443 (1999-10-01), None
patent: 2000-164839 (2000-06-01), None

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