Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-06-12

2007-06-12

Menefee, James (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

11264866

ABSTRACT:
An edge-emitting semiconductor laser includes a resonator structure having an active layer. A low reflection three-layer film is provided on in emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed in an exemplary embodiment by sequentially stacking a first Al2O3layer having a thickness of 10 nm, an Si3N4film having a thickness of 190 nm, and a second Al2O3layer having a thickness of 10 nm.

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