Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-20
2007-02-20
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
10430581
ABSTRACT:
There is provided a semiconductor device including a picture display function and a picture capturing function on the same substrate. The semiconductor device includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, which are provided on the same substrate. Moreover, in the semiconductor device, the structure/manufacturing process of the image sensor is made coincident with the structure/manufacturing process of the pixel matrix and the peripheral driver circuit, so that the semiconductor device can be manufactured at low cost.
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Specification, Drawings, Claims and Filing Receipt as filed and claims as amended for U.S. Appl. No. 11/417,202 with the filing date of May 4, 2006, Zhang et al.
Koyama Jun
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Crane Sara
Semiconductor Energy Laboratory Co,. Ltd.
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