Method for planarizing a thin film

Details Method for planarizing a thin film Method for planarizing a thin film

2007-12-11

2007-12-11

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21303, C257SE21304

Reexamination Certificate

active

09678414

ABSTRACT:
A layer of required material, such as polysilicon, is planarized by first forming a sacrificial layer of material, such as an oxide, on the layer of required material. The combined layers of required and sacrificial materials are then planarized using chemical-mechanical polishing until the sacrificial material has been substantially, completely removed.

REFERENCES:
patent: 5378318 (1995-01-01), Weling et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5560802 (1996-10-01), Chisholm
patent: 5618381 (1997-04-01), Doan et al.
patent: 5688720 (1997-11-01), Hayashi
patent: 5783488 (1998-07-01), Bothra et al.
patent: 5795495 (1998-08-01), Meikle
patent: 5872043 (1999-02-01), Chen
patent: 5981354 (1999-11-01), Spikes et al.
patent: 6162368 (2000-12-01), Li et al.
patent: 6197660 (2001-03-01), Jang et al.
patent: 6316363 (2001-11-01), Blalock et al.
patent: 6331488 (2001-12-01), Doan et al.
patent: 6348415 (2002-02-01), Lee et al.

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