Method for producing a stacked structure

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S458000, C438S459000, C438S460000

Reexamination Certificate

active

10450528

ABSTRACT:
Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

REFERENCES:
patent: 5661316 (1997-08-01), Kish et al.
patent: 5783477 (1998-07-01), Kish et al.
patent: 6010579 (2000-01-01), Henley et al.
patent: 0 460 437 (1991-12-01), None
patent: 0460437 (1991-12-01), None
Y-F Chou et al.: “Angular alignment for wafer bonding” Proceedings of the SPIE, vol. 2879, pp. 291-297 Oct. 14, 1996.

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