Method of cleaning CVD equipment processing chamber

Details Method of cleaning CVD equipment processing chamber Method of cleaning CVD equipment processing chamber

2007-06-26

2007-06-26

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Hollow work, internal surface treatment

C134S001100, C134S022100, C134S031000, C134S902000, C438S905000, C156S345470

Reexamination Certificate

active

10385984

ABSTRACT:
A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2gas and an inert gas are used as the cleaning gas. A concentration of the F2gas is 10% or higher. The F2gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2gas cylinder by diluting F2gas at a given concentration by an inert gas.

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H. Pierson. Handbook of Chemical Vapor Deposition (CVD). Noyes Publications, 1992. pp. 150, 248).

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