Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-02-20
2007-02-20
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S215000, C257S415000
Reexamination Certificate
active
10934840
ABSTRACT:
A micromechanical structure and device and methods of forming and using the structure and device are disclosed. The structure includes an ion conductor and a plurality of electrodes. Mechanical properties of the structure are altered by applying a bias across the electrodes. Such structures can be used to form device such as actuators and air-gap devices.
REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6635914 (2003-10-01), Kozicki et al.
patent: 6900498 (2005-05-01), Stauf et al.
Axon Technologies Corporation
Huynh Andy
Nguyen Thinh T
Snell & Wilmer L.L.P.
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