Ion doping system, ion doping method and semiconductor device

Details Ion doping system, ion doping method and semiconductor device Ion doping system, ion doping method and semiconductor device

2007-06-12

2007-06-12

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492100, C250S492220, C313S361100, C313S362100, C315S111010, C430S030000, C257S061000

Reexamination Certificate

active

10559128

ABSTRACT:
An ion doping system includes a chamber11, an exhausting section13for exhausting gases from the chamber, an ion source12provided for the chamber, and an accelerating section23for extracting the ions, generated in the ion source12, from the ion source12and accelerating the ions toward a target. The ion source12includes an inlet port14to introduce a gas including a dopant element, a filament15emitting thermo electrons, and an anode electrode17to produce an arc discharge between the filament and itself. The ion source12decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.

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