RF power semiconductor package and method of manufacture

Details RF power semiconductor package and method of manufacture RF power semiconductor package and method of manufacture

1974-10-18

1976-12-07

Wojciechowicz, Edward J.

357 51, 357 68, 357 71, 357 74, 357 81, H01L 3902, H01L 2702, H01L 2348, H01L 2302

Patent

active

039966038

ABSTRACT:
High frequency power transistor carriers are made by bonding a metalized ceramic base to a lead frame strip, cutting the lead frame strip to isolate the base and collector leads while still maintaining the transistor carriers in strip form, and subsequently gold plating the resultant structure. Transistor dice are then attached to each ceramic carrier, and each transistor carrier in the strip is then electrically tested. The individual carriers are then separated from the lead frame strip. The individual carrier has wide base and collector leads extending outward from the ceramic base for a substantial distance and then the base and collector leads are narrowed down. When the individual transistor carrier is used in combination with a hybrid assembly, a reduction in lead inductance and total hybrid package size is obtained while exact carrier placement relative to the hybrid assembly is not required.

REFERENCES:
patent: 3387190 (1968-06-01), Winkler
patent: 3478161 (1969-11-01), Carley
patent: 3628105 (1971-12-01), Sakai et al.

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