Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-12-18
2007-12-18
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S795000, C438S799000, C257S295000, C257SE27104, C257SE29272, C257SE21208, C257SE21663
Reexamination Certificate
active
10509553
ABSTRACT:
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above the Curie temperature TC1of the first layer in an external magnetic field, the magnetization of the second layer is oriented by a second-order phase transition along the field direction of the external magnetic field. Upon further cooling below the Curie temperature TC2of the second layer, the latter is oriented antiparallel with respect to the first layer as a result of the antiferromagnetic coupling between the two layers.
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Sun, N.X.; Wang, S.X., “Soft high saturation magnetization Fe-Co-N thin films for inductive write heads,” Magnetics Conference, 2000. INTERMAG 2000 Digest of Technical Papers. 2000 IEEE International , vol. no.pp. 191-191, Apr. 4-8, 2005.
Klostermann Ulrich
Ruehrig Manfred
Dicke, Billig & Czaha, PLLC
Estrada Michelle
Infineon - Technologies AG
Stark Jarrett J
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