Method of manufacturing a thin film transistor with a halogen do

Details Method of manufacturing a thin film transistor with a halogen do Method of manufacturing a thin film transistor with a halogen do

1994-03-28

1996-06-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437174, 437240, 148DIG118, H01L 21225, H01L 21268, H01L 2184

Patent

active

055232400

ABSTRACT:
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

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