Semiconductor device with a barrier layer and a metal layer

Details Semiconductor device with a barrier layer and a metal layer Semiconductor device with a barrier layer and a metal layer

2007-08-14

2007-08-14

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23011, C257SE21597, C257S700000, C257S701000, C257S758000, C257S774000, C257S773000

Reexamination Certificate

active

11054603

ABSTRACT:
This invention provides a semiconductor device that can minimize deterioration of electric characteristics of the semiconductor device while minimizing the amount of etching required. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a wiring layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the wiring layer.

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