Semiconductor packaging substrate and method of producing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S758000, C257S700000, C257S692000

Reexamination Certificate

active

11155229

ABSTRACT:
A semiconductor packaging substrate and a process for producing the same is disclosed. An internal circuit is formed by lamination. Then, external circuit is formed on the internal circuit by build-up technology. The substrate can be used as a flip-chip ball grid array packaging substrate with high density and small pitch. Furthermore, the substrate of the invention has a plurality of bonding pads thereon. The bump pads are divided into power/ground bump pads, first signal bump pads, and second signal bump pads. The first signal bump pads surround the power/ground bump pads and are surrounded by the second signal bump pads.

REFERENCES:
patent: 5685070 (1997-11-01), Alpaugh et al.
patent: 5847327 (1998-12-01), Fischer et al.
patent: 1178625 (1998-04-01), None
patent: 2518221 (2002-10-01), None

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