Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2007-06-12

2007-06-12

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE27006, C257S295000, C257S417000, C257S420000

Reexamination Certificate

active

11037108

ABSTRACT:
A magnetic random access memory according to an example of the present invention includes a magnetoresistive element, a write line for use in generation of a magnetic field for data writing with respect to the magnetoresistive element, and a strained layer which is disposed so as to correspond to the magnetoresistive element, and which has a function of being physically deformed at the time of data writing, and of controlling a magnitude of a switching magnetic field of the magnetoresistive element.

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