Method for forming a resist pattern of magnetic device

Details Method for forming a resist pattern of magnetic device Method for forming a resist pattern of magnetic device

2007-06-19

2007-06-19

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603120, C029S603130, C029S603140, C029S603180, C029S603230, C360S324000, C216S022000

Reexamination Certificate

active

10773234

ABSTRACT:
A pattern forming method includes forming a resist pattern for lift off of a first film disposed on a surface side of a base, patterning the first film by dry etching using the resist pattern as a mask, depositing a second film after patterning, removing the resist pattern to remove a portion of the second film on the resist pattern, and etching the surface side of the base after removing the resist pattern. The etching includes dry-etching the surface side of the base using etching particles with a main incident angle of the etching particles to the surface side of the base being set in a range of 60° to 90° relative to a normal direction of the one surface of the base. The dry etching is performed while rotating the base about an axis substantially parallel with the normal direction.

REFERENCES:
patent: 6174736 (2001-01-01), Tsukamoto et al.
patent: 6315875 (2001-11-01), Sasaki
patent: 6335081 (2002-01-01), Araki et al.
patent: 6381107 (2002-04-01), Redon et al.
patent: 6473257 (2002-10-01), Shimazawa et al.
patent: 6537732 (2003-03-01), Kamijima
patent: 6587316 (2003-07-01), Hasegawa
patent: 6669983 (2003-12-01), Kagami et al.
patent: 2002/0044394 (2002-04-01), Hasegawa
patent: 2002/0187430 (2002-12-01), Watanabe
patent: A 2000-99926 (2000-04-01), None
patent: A-2001-036165 (2001-02-01), None
patent: A-2001-084535 (2001-03-01), None
patent: A-2002-076472 (2002-03-01), None
patent: A-2002-204003 (2002-07-01), None
patent: A-2002-363730 (2002-12-01), None

Affiliated with

Also associated with

Rating

Method for forming a resist pattern of magnetic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a resist pattern of magnetic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a resist pattern of magnetic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3824949