Semiconductor integrated circuit device and manufacturing...

Details Semiconductor integrated circuit device and manufacturing... Semiconductor integrated circuit device and manufacturing...

2007-05-22

2007-05-22

Lebentritt, Michael (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

10871282

ABSTRACT:
A manufacturing process for a semiconductor integrated circuit device prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The metal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.

REFERENCES:
patent: 4505028 (1985-03-01), Kobayashi et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5719410 (1998-02-01), Suehiro et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6476488 (2002-11-01), Jeng et al.
patent: 7119443 (2006-10-01), Nakamura et al.
patent: 2003/0064578 (2003-04-01), Nakamura et al.
patent: 2003/0205811 (2003-11-01), Nakamura et al.
patent: 2004/0224476 (2004-11-01), Yamada et al.
patent: 2005/0040452 (2005-02-01), Nakamura et al.
patent: 2005/0239246 (2005-10-01), Manning
patent: 56-107552 (1981-08-01), None
patent: 59-10271 (1984-01-01), None
patent: 60-72229 (1985-04-01), None
patent: 60-89943 (1985-05-01), None
patent: 60-123060 (1985-07-01), None
patent: 61-127123 (1986-06-01), None
patent: 61-127124 (1986-06-01), None
patent: 61-150236 (1986-07-01), None
patent: 61-152076 (1986-07-01), None
patent: 61-267365 (1986-11-01), None
patent: 1-94657 (1989-04-01), None
patent: 3-119763 (1991-05-01), None
patent: 5-90202 (1993-04-01), None
patent: 7-94716 (1995-04-01), None
patent: 8-264531 (1996-10-01), None
patent: 8-306917 (1996-11-01), None
patent: 2001-274248 (2001-10-01), None
Akasaka et al, IEEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996, pp. 1864-1869.
Elsevier, Applied Surface Science 117/118, 1997, pp. 312-316.
Nakajima et al, “Advanced Metalization Conference: Japanese Session”, Tokyo Univ., 1995.
Bernd Goehel et al, IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 897-906.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3824183