Split and cover technique for phase shifting photolithography

Details Split and cover technique for phase shifting photolithography Split and cover technique for phase shifting photolithography

1994-12-16

1996-06-04

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430312, 430394, G03F 900

Patent

active

055231861

ABSTRACT:
A photolithographic technique and apparatus involving two exposures and the sectioning of a first original mask opening that has segments which conflict with a second original mask opening. A plurality of segmented openings are configured in a first mask including at least one phase shifted opening and at least one non-phase shifted opening. Imaging radiation is projected through the plurality of segmented openings onto at least two electromagnetic radiation application regions (EARs) on a surface to be imaged during one exposure, with one of the two EAR's being phase shifted and the other non-phase shifted. At least one segmented opening is formed in a second mask. Radiation is projected through the second mask segmented opening onto one or more EARs on the surface during another exposure. At least one of the second mask EARs interconnects at least one of the phase shifted EARs and one of the non-phase shifted EARs. The first mask is a split mask, the second mask is a cover mask and both masks may be on a single mask substrate.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
"Improving Resolution in Photolithography with a Phase-Shifting Mask", M. Levenson et al., IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982.
"Fabrication of 64M DRAM with i-Line Phase-Shift Lithography", K. Nakagawa et al., IEDM Tech. Digest, pp. 817-820, Jun. 1990.
"Transparent Phase shifting Mask", H. Watanabe et al. IEDM Tech. Digest, pp. 821-824, Jun. 1990.
"0.2 um or Less i-Line Lithography by Phase-Shifting-Mask Technology", H. Jinbo et al, IEDM Tech. Digest, pp. 825-828, Jun. 1990.

Affiliated with

Also associated with

Rating

Split and cover technique for phase shifting photolithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Split and cover technique for phase shifting photolithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split and cover technique for phase shifting photolithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-382406