Semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S089000, C257S103000

Reexamination Certificate

active

11208638

ABSTRACT:
A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.

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patent: 5491350 (1996-02-01), Unno et al.
patent: 6091085 (2000-07-01), Lester
patent: 6465809 (2002-10-01), Furukawa et al.
patent: 6528823 (2003-03-01), Akaike et al.
patent: 6815312 (2004-11-01), Furukawa et al.
patent: 2006/0043386 (2006-03-01), Furukawa et al.
patent: 2002-190619 (2002-07-01), None
U.S. Appl. No. 11/538,646, filed Oct. 4, 2006, Kato et al.
U.S. Appl. No. 11/208,654, filed Aug. 23, 2005, Miyagaki et al.
U.S. Appl. No. 11/208,638, filed Aug. 23, 2005, Furukawa et al.

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