Semiconductor laser having protruding portion

Details Semiconductor laser having protruding portion Semiconductor laser having protruding portion

2007-07-31

2007-07-31

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257S099000, C257S103000

Reexamination Certificate

active

10962996

ABSTRACT:
A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a stripe-shaped waveguide region formed therein; end face protective film formed on the end face of the semiconductor layer that is substantially perpendicular to the waveguide region; wherein a p-side protruding portion is formed in the vicinity of the end portion of a p-electrode or n-electrode.

REFERENCES:
patent: 6583510 (2003-06-01), Hanamaki et al.
patent: 6683324 (2004-01-01), Hayakawa
patent: 6707071 (2004-03-01), Hashimoto et al.
patent: 2001-332796 (2001-11-01), None

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