Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-07-24
2007-07-24
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE43004
Reexamination Certificate
active
11070379
ABSTRACT:
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.
REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5902690 (1999-05-01), Tracy et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6288929 (2001-09-01), Lienau
patent: 2005/0201147 (2005-09-01), Kajiyama
patent: 11-238377 (1999-08-01), None
patent: 2000-90658 (2000-03-01), None
patent: 2000-353791 (2000-12-01), None
patent: 2001-237472 (2001-08-01), None
patent: 2001-284550 (2001-10-01), None
patent: 2002-526909 (2002-08-01), None
patent: 2002-368199 (2002-12-01), None
patent: 2001-0100862 (2001-11-01), None
patent: WO 00/10172 (2000-02-01), None
patent: WO 00/72324 (2000-11-01), None
patent: WO 01/71777 (2001-09-01), None
Kabushiki Kaisha Toshiba
Smith Bradley K
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