Photovoltaic device

Details Photovoltaic device Photovoltaic device

2007-11-27

2007-11-27

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31001, C257SE25009

Reexamination Certificate

active

11464263

ABSTRACT:
A photovoltaic device includes at least a first electrode, a first-conductivity-type layer composed of non-single-crystalline silicon, a second-conductivity-type layer composed of polycrystalline silicon, a third-conductivity-type layer composed of non-single-crystalline silicon, and a second electrode, wherein the contact surface of the first electrode with respect to the first-conductivity-type layer has a shape interspersed with a plurality of projections, and the lower limit and the upper limit of the density of the projections interspersed on the surface of the first electrode satisfy the following equations, provided that the thickness of the second-conductivity-type layer is t μm:in-line-formulae description="In-line Formulae" end="lead"?Lower limit=0.312 exp(−0.60t) pieces/μm2in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?Upper limit=0.387 exp(−0.39t) pieces/μm2.in-line-formulae description="In-line Formulae" end="tail"?

REFERENCES:
patent: 5810945 (1998-09-01), Stutzmann et al.
patent: 6331672 (2001-12-01), Matsuda et al.

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