Low cost bonding pad and method of fabricating same

Details Low cost bonding pad and method of fabricating same Low cost bonding pad and method of fabricating same

2007-07-17

2007-07-17

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Solder wettable contact, lead, or bond

C257S781000, C257S734000

Reexamination Certificate

active

11164653

ABSTRACT:
A structure and a method of forming the structure. The structure including: an integrated circuit chip having a set of wiring levels from a first wiring level to a last wiring level, each wiring level including one or more damascene, dual-damascene wires or damascene vias embedded in corresponding interlevel dielectric levels, a top surface of a last damascene or dual-damascene wire of the last wiring level substantially coplanar with a top surface of a corresponding last interlevel dielectric level; a capping layer in direct physical and electrical contact with a top surface of the last damascene or dual-damascene wire, the last damascene or dual-damascene wire comprising copper; a dielectric passivation layer formed on a top surface of the last interlevel dielectric level; and an aluminum pad in direct physical and electrical contact with the capping layer, a top surface of the aluminum pad not covered by the dielectric passivation layer.

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