Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-02-06
2007-02-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S528000, C257S595000, C257S592000, C257S552000, C438S208000, C438S379000
Reexamination Certificate
active
11003383
ABSTRACT:
An N type semiconductor layer is epitaxially grown on a P type semiconductor substrate of which one end is grounded, and an element isolation layer made of a P type diffusion layer is formed by means of diffusion around the N type semiconductor layer in order to electrically isolate the N type semiconductor layer. The metal layer which is located above the N type semiconductor layer and which forms a wire or a bonding pad is isolated from the N type semiconductor layer in which a diffusion layer or the like has been formed by an insulating film. An N type buried diffusion layer having an impurity concentration higher than that of the N type semiconductor layer is provided between the P type semiconductor substrate and the N type semiconductor layer. In addition, a P type semiconductor layer is formed by means of diffusion between the insulating film and the N type semiconductor layer plus the element isolation layer.
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Erdem Fazli
Flynn Nathan J.
Matsushita Electric - Industrial Co., Ltd.
Stevens Davis Miller & Mosher LLP
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