Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S528000, C257S595000, C257S592000, C257S552000, C438S208000, C438S379000

Reexamination Certificate

active

11003383

ABSTRACT:
An N type semiconductor layer is epitaxially grown on a P type semiconductor substrate of which one end is grounded, and an element isolation layer made of a P type diffusion layer is formed by means of diffusion around the N type semiconductor layer in order to electrically isolate the N type semiconductor layer. The metal layer which is located above the N type semiconductor layer and which forms a wire or a bonding pad is isolated from the N type semiconductor layer in which a diffusion layer or the like has been formed by an insulating film. An N type buried diffusion layer having an impurity concentration higher than that of the N type semiconductor layer is provided between the P type semiconductor substrate and the N type semiconductor layer. In addition, a P type semiconductor layer is formed by means of diffusion between the insulating film and the N type semiconductor layer plus the element isolation layer.

REFERENCES:
patent: 6458632 (2002-10-01), Song et al.
patent: 6514781 (2003-02-01), Chang et al.
patent: 6552399 (2003-04-01), Jun et al.
patent: 6724050 (2004-04-01), Salling et al.
patent: 10335371 (1998-12-01), None
patent: 2000150798 (2000-05-01), None

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