Flash memory device and method of erasing flash memory cell...

Details Flash memory device and method of erasing flash memory cell... Flash memory device and method of erasing flash memory cell...

2007-01-09

2007-01-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185230, C365S218000, C365S230030, C365S230060

Reexamination Certificate

active

11011725

ABSTRACT:
A flash memory device and method of erasing flash memory cells thereof are provided. The erase of a cell block unit or a page unit is effected by a word line switch included in a predecoder according to a page erase signal. If the erase is effected in the cell block unit, all word lines of one cell block are made to keep 0V. Meanwhile, if the erase is effected in the page unit, only word lines of a corresponding page are made to keep 0V and the remaining word lines are made floated, so that the erase is not performed. Accordingly, the erase can be carried out in the cell block unit or the page unit. It is thus possible to improve efficiency of data management.

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Official Action for Korean Patent Application No. 2004-70228 dated Sep. 6, 2004.

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