Semiconductor laser and process for manufacturing the same

Details Semiconductor laser and process for manufacturing the same Semiconductor laser and process for manufacturing the same

2007-05-22

2007-05-22

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

10643944

ABSTRACT:
This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer (21) sandwiched between the active layer (101) and the p-type semiconductor layer (24), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.

REFERENCES:
patent: 5345463 (1994-09-01), Mannoh et al.
patent: 5903017 (1999-05-01), Itaya et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6111277 (2000-08-01), Ikeda
patent: 6580736 (2003-06-01), Yoshie et al.
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 2003/0091085 (2003-05-01), Northrup et al.
patent: 4-275479 (1992-10-01), None
patent: 5-291686 (1993-11-01), None
patent: 6-283825 (1994-10-01), None
patent: 10-200214 (1998-07-01), None
patent: 11-251687 (1999-09-01), None
patent: 11251687 (1999-09-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2001-36196 (2001-02-01), None
patent: 2001-332815 (2001-11-01), None
Tojyo, Tsuyoshi., et al. “GaN based High Power Blue Violet Laser Diodes.” The Japan Society for Applied Physlcs, vol. 40. Pad 1. No. 5A, May 2001, pp. 3206-3210.
Goto, S., et al. “InGaN: Improvement of quantum efficiency by InGaN interlayer for blue-violet laser diodes.” Sony Shiroishi Semiconductor Inc. 28p-E-12, p. 369.
Nakamura, Shuji. “InGaN Multiquantum-Well-Structure Laser Diodes with GaN—AlGaN Modulation -Doped Strained-Layer Superlattices.” IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May/Jun. 1998, pp. 483-489.
Kneissl, Michael., et al. “Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates.” Applied Physics Letters, vol. 77, No. 13, Sep. 25, 2000, pp. 1931-1933.
Nakamura, Shuji., et al. “UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN.” IEICE Trans. Electron., vol. E83-C, No. 4, Apr. 2000, pp. 529-535.
Tojyo, Tsuyoshi., et al. “GaN-Based High Power Blue-Violet Laser Diodes.” The Japan Society for Applied Physics, vol. 40, Part 1. No. 5A, May 2001, pp. 3206-3210.
Kuroda, Naotaka., et al. “Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities.” Journal of Crystal Growth 189/190 (1998) pp. 551-555.
Ohba, Y., et al A study on strong memory effects for Mg doping GaN metalorganic chemical vapor deposition. Journal of Crystal growth 145 (1994) pp. 214-218.
Blaauw, C., et al. “Secondary ion mass spectrometry and electrical characterization of Zn diffusion in n-type InP.” J. Appl. Phys. 66(2), Jul. 15, 1989, American Institute of Physics, pp. 605610.
Chinese Office Action issued in corresponding Chinese Patent Application No. CN 03805468X, dated Jul. 21, 2006.

Affiliated with

Also associated with

Rating

Semiconductor laser and process for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and process for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and process for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3813097