Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-13
2007-11-13
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189011, C365S189110, C365S191000
Reexamination Certificate
active
11172742
ABSTRACT:
A cell in an information storage cell array is written, by asserting a signal on a bit line that is coupled to the cell and to a group of other cells in the array, to a first voltage. The cell is read by asserting a signal on a word line that is coupled to the cell and to another group of cells in the array, in a direction of, but without reaching, the first voltage. Other embodiments are also described and claimed.
REFERENCES:
patent: 3983543 (1976-09-01), Cordaro
patent: 4488265 (1984-12-01), Kotecha
patent: 4610001 (1986-09-01), Ong et al.
patent: 4920391 (1990-04-01), Uchida
patent: 4935896 (1990-06-01), Matsumura et al.
patent: 5220530 (1993-06-01), Itoh
patent: 5572473 (1996-11-01), Robertson
patent: 5701267 (1997-12-01), Masuda et al.
patent: 5784320 (1998-07-01), Johnson
patent: 6314017 (2001-11-01), Emori et al.
patent: 6831866 (2004-12-01), Kirihata
patent: 6954394 (2005-10-01), Knall et al.
patent: 7106620 (2006-09-01), Chang et al.
patent: 410011980 (1998-01-01), None
N. Ikeda, et al., “A Novel Logic Compatible Gain Cell With Two Transistors and One Capacitor”, ULSI R&D Laboratories, LSI Business & Technology Department Group, C.N.C., Sony Corporation, Japan—2000 Symposium on VLSI Technology Digest of Technical Papers, 0-7803-6305-4, 2000 IEEE (pp. 168-169).
T. Ohsawa, et al., Abstract “Memory Design Using One-Transistor Gain Cell on SOI”, Publication Date: 2002, Meeting Date: Feb. 3, 2002-Feb. 7, 2002, San Francisco, CA, USA, ISBN #: 0-7803-7335-9, IEEEXploreRelease 2.0 Internet article (1 page).
De Vivek K.
Keshavarzi Ali
Khellah Muhammad M.
Paillet Fabrice
Somasekhar Dinesh
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nguyen Viet Q.
LandOfFree
Operating an information storage cell array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Operating an information storage cell array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Operating an information storage cell array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3812731