Formation of metal-insulator-metal capacitor simultaneously...

Details Formation of metal-insulator-metal capacitor simultaneously... Formation of metal-insulator-metal capacitor simultaneously...

2007-11-27

2007-11-27

Ha, Nguyen T (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S303000, C361S304000, C361S309000, C361S312000, C361S330000, C257S295000, C257S296000

Reexamination Certificate

active

10709907

ABSTRACT:
Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and the dielectric layer, and forms a hardmask (silicon oxide hardmask, a silicon nitride hardmask, etc.) over the etch stop layer. Next, a photoresist is patterned above the hardmask, which allows the hardmask, the etch stop layer, the dielectric layer, and the lower conductor layer to be etched through the photoresist.

REFERENCES:
patent: 5736448 (1998-04-01), Saia et al.
patent: 5827766 (1998-10-01), Lou
patent: 5851896 (1998-12-01), Summerfelt
patent: 6074946 (2000-06-01), Ouellet et al.
patent: 6150707 (2000-11-01), Cook et al.
patent: 6319767 (2001-11-01), Cha et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6593185 (2003-07-01), Tsai et al.
patent: 6597032 (2003-07-01), Lee
patent: 6603165 (2003-08-01), Yamauchi et al.
patent: 6720232 (2004-04-01), Tu et al.
patent: 6972265 (2005-12-01), Schwarz
patent: 7038266 (2006-05-01), Wang
patent: 7154162 (2006-12-01), Ahn et al.

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