Method of making selective crystalline silicon regions containin

Details Method of making selective crystalline silicon regions containin Method of making selective crystalline silicon regions containin

1980-04-30

1982-03-30

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 219121LF, 357 2, 357 30, 357 91, 427 531, H01L 2126, H01L 21265, H01L 4500

Patent

active

043222536

ABSTRACT:
A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

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