Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-02-27
2007-02-27
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S092000, C117S104000
Reexamination Certificate
active
10785554
ABSTRACT:
A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016atoms/cm3and less than or equal to about 1×1019atoms/cm3.
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Copy of Office Action Issued on Feb. 5, 2004, in the Japanese counterpart patent application No. 2001-028914, 3 pages.
Copy of Office Action mailed on Dec. 22, 2005 for Japanese counterpart patent application No. 2001-028914, 2 pages.
Kunemund Robert
Morrison & Foerster / LLP
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