Semiconductor device with improved contacts

Details Semiconductor device with improved contacts Semiconductor device with improved contacts

2007-06-19

2007-06-19

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S738000, C257S748000

Reexamination Certificate

active

11201717

ABSTRACT:
A device with a solder joint made of a copper contact pad (210) of certain area (202) and an alloy layer (301) metallurgically attached to the copper pad across the pad area. The alloy layer contains copper/tin alloys, which include Cu6Sn5intermetallic compound, and nickel/copper/tin alloys, which include (Ni,Cu)6Sn5intermetallic compound. A solder element (308) including tin is metallurgically attached to the alloy layer across the pad area. No fraction of the original thin nickel layer is left after the reflow process. Copper/tin alloys help to improve the drop test performance, nickel/copper/tin alloys help to improve the life test performance.

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Charles A. Harper, Electronic Packaging and Interconnection Handbook, 2000, McGraw-Hill, Third Edition, p. 4.12.
Kazuaki Ano “High Reliability Solder Joint with Multilayer Structure” U.S. Appl. No. 10/706,147, filed Nov. 12, 2003.

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