Single longitudinal mode semiconductor laser

Details Single longitudinal mode semiconductor laser Single longitudinal mode semiconductor laser

1984-05-07

1986-11-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 48, 372 50, 372 96, H01S 319

Patent

active

046226745

ABSTRACT:
A single longitudinal mode semiconductor laser having a distributed Bragg reflector with increased diffractive efficiency. The increased diffractive efficiency results from placing the diffraction grating within the optical waveguide, rather than on either its upper or its lower face. This placement enables maximization of the electric field component of light beams subjected to periodic variations in the refractive index within the optical waveguide, in turn enabling increased reflecting power which results in a low oscillation threshold and a high differential quantum efficiency.

REFERENCES:
patent: 4464762 (1984-08-01), Furuya
Walpole et al., "Distributed Feedback Pb.sub.1-x Sn.sub.x Te Double-Heterotructure Lasers", APL vol. 29, No. 5, 1 Sep. 1976, pp. 307-309.

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