Substrate processing apparatus and substrate processing method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Reexamination Certificate

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C117S202000, C118S715000, C118S718000, C118S720000, C156S354000

Reexamination Certificate

active

10422408

ABSTRACT:
A substrate processing apparatus include a spin chuck capable of holding a semiconductor wafer in a horizontal position, a drive motor for driving the spin chuck for rotation, and a processing vessel accommodating the spin chuck and the drive motor50therein and capable of sealing a supercritical fluid, such as supercritical carbon dioxide, therein. The supercritical fluid flows along the upper and the lower surface of the semiconductor wafer at velocities relative to the upper and the lower surface of the semiconductor wafer as the spin chuck holding the semiconductor wafer in a horizontal position rotates to remove contaminants including particles and adhering to the semiconductor wafer from the semiconductor wafer.

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