Method of forming a self-aligned transistor

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Sidewall base contact

Reexamination Certificate

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Details

C438S366000, C438S446000, C257S197000, C257S526000, C257SE29242

Reexamination Certificate

active

11238868

ABSTRACT:
In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor.

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patent: 2005/0012180 (2005-01-01), Freeman et al.

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