Double gate field effect transistor with diamond film

Details Double gate field effect transistor with diamond film Double gate field effect transistor with diamond film

2007-07-17

2007-07-17

Doan, Theresa (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S077000

Reexamination Certificate

active

11123299

ABSTRACT:
A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.

REFERENCES:
patent: 6573565 (2003-06-01), Clevenger et al.
patent: 6940096 (2005-09-01), Ravi

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