Integrated circuit amplifier device and method using FET...

Details Integrated circuit amplifier device and method using FET... Integrated circuit amplifier device and method using FET...

2007-01-23

2007-01-23

Pascal, Robert (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C330S283000, C330S253000

Reexamination Certificate

active

10904238

ABSTRACT:
An integrated circuit amplifier includes, in an exemplary embodiment, a first field effect transistor (FET) device configured as a common source amplifier with source degeneration and a second FET device configured as a tunneling gate FET, the tunneling gate FET coupled to the source follower. The tunneling gate FET is further configured so as to set a transconductance of the amplifier and the common source amplifier with source degeneration is configured so as to set an output conductance of the amplifier.

REFERENCES:
patent: 4340867 (1982-07-01), Sano
patent: 5464792 (1995-11-01), Tseng et al.
patent: 6335657 (2002-01-01), Hayase et al.
patent: 6605996 (2003-08-01), Yu et al.
patent: 6819166 (2004-11-01), Choi et al.
Junjun Li, Robert Gauthier*, and Elyse Rosenbaum, “A Compact, Timed-shutoff, MOSFET-based Power Clamp for On-chip ESD Protection”, Dept of Electrical and CopmputerEngineering, University of Illinois at Urbana-Champaign,* IBM Semiconductor Research and DevelopmentCenter, VT, p. 2-5.

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