Optically improved CMOS imaging sensor structure to lower...

Details Optically improved CMOS imaging sensor structure to lower... Optically improved CMOS imaging sensor structure to lower...

2007-11-20

2007-11-20

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C348S340000

Reexamination Certificate

active

11064346

ABSTRACT:
A sensor die that lowers the lens requirements by the use of a variable thickness distribution over the sensor die. The sensing portion of the sensor die has a different number of layers than the non-sensing portion of the sensor die. By reducing the thickness of each layer and/or eliminating one or more unnecessary layers in the sensing portion, the thickness of the sensing portion is reduced to lower the amount of stray light and allow an increase in chief ray angle as well as a decrease in the F-number of the imaging system coupled to the sensor die without compromising the image quality of the sensor die. Also, the thickness reduction provides the design engineers with extra allowance in handling the chief ray angle and F-number for a given lens requirements.

REFERENCES:
patent: 5796154 (1998-08-01), Sano et al.
patent: 6111247 (2000-08-01), Sengupta
patent: 6362513 (2002-03-01), Wester
patent: 6577342 (2003-06-01), Wester
patent: 2003/0173599 (2003-09-01), Nakai
patent: 2004/0165097 (2004-08-01), Drowley et al.

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