Semiconductor light-emitting device having annular shape...

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

Reexamination Certificate

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C313S498000, C257S079000

Reexamination Certificate

active

10969015

ABSTRACT:
A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.

REFERENCES:
patent: 6121635 (2000-09-01), Watanabe et al.
patent: 2002/0020842 (2002-02-01), Sasaki et al.
patent: 2003/0001162 (2003-01-01), Udagawa
patent: HEI 4-229665 (1992-08-01), None
patent: HEI 8-167738 (1996-06-01), None
patent: HEI 11-26810 (1999-01-01), None

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