Fuse structure for a semiconductor device

Details Fuse structure for a semiconductor device Fuse structure for a semiconductor device

2007-03-13

2007-03-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE23149, C257SE21592

Reexamination Certificate

active

11162150

ABSTRACT:
A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and bottom insulating layers. The fuse layer is connected to the other metal layers through via plugs. The fuse layer includes separate blocks and at least a connecting block and is coupled to at least a heat buffer block of a different layer. Because the heat buffer block is coupled to the blocks of the fuse layer, new fusing point and a new path for effectively dissipating the heat are provided and a longer and sinuous electric current path is obtained between the blocks through the heat buffer blocks. The heat buffer block and the blocks coupled to the heat buffer block can avoid large current flowing through the fuse structure and prevent overheating.

REFERENCES:
patent: 2005/0258504 (2005-11-01), Cheng et al.
patent: 2006/0022300 (2006-02-01), Wu et al.

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