Method for manufacturing a photonic device and a photonic...

Details Method for manufacturing a photonic device and a photonic... Method for manufacturing a photonic device and a photonic...

2007-09-25

2007-09-25

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating optical article

C216S041000, C216S058000, C438S694000, C385S129000

Reexamination Certificate

active

10506563

ABSTRACT:
The present invention relates to a photonic device having a first set of layers (22) including at least a first waveguide layer (3) arranged in a waveguide mesa (61). A cladding layer (7) is arranged on top of the waveguide mesa (61) and surrounding semiconductor material (1). A contact layer (8) is arranged on top of the cladding layer (7), and a metal contact (9, 80) is arranged on top of the contact layer (8). The cladding (7) and contact (8) layer are shaped in an etching process to have a mesa structure at least above the waveguide mesa (61). An insulating material (25, 82) is also applied around the mesa structure. Optionally a second photonic device having a second set or layers (31) including at least a second waveguide layer (33), may be coupled to the first photonic device in a light transmission direction thereof. The invention also relates to a method for manufacturing, the photonic device.

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N. Bouadma et al., “1.3-μm GaInAsP/InP Buried-Ridge-Structure Laser and its Monolithic Integration with Photodetector Using Reactive Ion Beam Etching”, Journal of Lightwave Technology, vol. 12, May 15, 1999, pp. 742-748.
P. Olala et al., “DFB Laser Monolithically Integrated With an Absorption Modulator With Low Residual Reflectance and Small Chirp”, Electronics Letters, May 13, 1993, vol. 29 No. 10, pp. 859-860.

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