Method for homogenizing the thickness of a coating on a...

Details Method for homogenizing the thickness of a coating on a... Method for homogenizing the thickness of a coating on a...

2007-01-02

2007-01-02

Alanko, Anita (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S014000, C438S926000

Reexamination Certificate

active

10631582

ABSTRACT:
A method for homogenizing the thickness of a uniform layer deposited on a layer of a material etched according to functional patterns, consisting of filling the empty areas with dummy patterns; a function, providing the thickness variation of the uniform layer for a given distribution of the functional and dummy patterns, being known; the method comprising:determining a guard distance greater than the minimum possible distance between patterns;calculating the thickness variation which would be obtained if dummy patterns were placed inside of a region defined by the dimension of the empty area reduced by said guard distance; andif the calculated thickness variation is satisfactory, adopting the chosen dummy pattern distribution, otherwise iteratively repeating the process with a reduced guard distance.

REFERENCES:
patent: 5923563 (1999-07-01), Lavin et al.
patent: 6054362 (2000-04-01), Chuang
patent: 6253362 (2001-06-01), Anand et al.
patent: 6396158 (2002-05-01), Travis et al.
patent: 2 364 598 (2002-01-01), None
Yoo-Hyon Kim, et al., CHAMPS (CHemicAI-Mechanical Planarization Simulator), 2000 International Conference on Simulation Semiconductor Processes and Devices, Seattle, WA, (Cat No. 00TH8502), XP002240847, Sep. 6-8, 2000, pp. 123-126, Piscataway, NJ, USA, IEEE.

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