Methods and apparatus for measuring change in performance of...

Oscillators – With frequency calibration or testing

Reexamination Certificate

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C331S057000

Reexamination Certificate

active

11179874

ABSTRACT:
An integrated circuit device is provided having one or more pairs of ring oscillator circuits. Each ring oscillator circuit of the one or more pairs of ring oscillator circuits is configured to connect to at least one voltage source capable of applying a stress to a ring oscillator circuit. One or more frequency measurement circuits are each electrically connected to a respective pair of the one or more pairs of ring oscillator circuits. Each frequency measurement circuit is configured to measure a stress induced change in frequency difference of the respective pair of the one or more pairs of ring oscillator circuits.

REFERENCES:
patent: 2005/0140418 (2005-06-01), Muniandy et al.
S. Rangan et al., “Universal Recovery Behavior of Negative Bias Temperature Instability,” Electron Devices Meeting, IEDM '03 Technical Digest, IEEE International, 4 pages, Dec. 2003.
D. Schroder et al., “Negative Bias Temperature Instability: Road to Cross in Deep Submicron Silicon Semiconductor Manufacturing,” Journal of Applied Physics, Applied Physics Reviews-Focused Review, vol. 94, No. 1, pp. 1-18, Jul. 2003.
K. Mueller et al., “6-T Cell Circuit Dependent GOX SBD Model for Accurate Prediction of Observed VCCMIN Test Voltage Dependency,” Proceedings, 42nd Annual IEEE International Reliability Physics Symposium, 4 pages, Apr. 2004.
V. Reddy et al., “Impact of Negative Bias Temperature Instability on Digital Circuit Reliability,”40th Annual International Reliability Physics Symposium, pp. 248-254, 2002.
Y-H. Lee et al., “Effect of pMOST Bias-Temperature Instability on Circuit Reliability Performances,” Electron Devices Meeting, IEDM '03 Technical Digest, IEEE International, 4 pages, Dec. 2003.

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