Semiconductor integrated circuit for high frequency power...

Details Semiconductor integrated circuit for high frequency power... Semiconductor integrated circuit for high frequency power...

2007-05-29

2007-05-29

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including gain control means

C330S129000, C330S285000

Reexamination Certificate

active

11362818

ABSTRACT:
In a radio communication system, an electronic component for high frequency power amplifier carries out the detection of output level, required for feedback control of the output power of a high frequency power amplification circuit, by current detection. The electronic component has an error amplifier. The error amplifier compares an output level detection signal with an output level instruction signal, and generates a signal for controlling the gain of the high frequency power amplification circuit according to the difference between them. For the error amplifier, a low-pass amplification circuit is used. The amplification circuit is provided with, between its output terminal and its inverting input terminal, a phase compensation circuit. The phase compensation circuit comprises a resistance element, and another resistance element and a capacitive element in series connected in parallel with the resistance element.

REFERENCES:
patent: 6172567 (2001-01-01), Ueno et al.
patent: 6605999 (2003-08-01), Matsushita et al.
patent: 6756850 (2004-06-01), Matsushita et al.
patent: 6759906 (2004-07-01), Matsunaga et al.
patent: 2000-151310 (1999-08-01), None
U.S. Appl. No. 09/555,010 filed on May 23, 2000, in Japanese (34 pages), along with a verified English translation (64 page).
“Foundations and Applications of Microwave Circuit”, Sogo-Denshi Publisher, 1997, pp. 191-193, with English translation.

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