Stencil mask and its manufacturing method

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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10743007

ABSTRACT:
A stencil mask has a silicon thin film in which an opening pattern is formed, a silicon oxide film, and a support part. The silicon thin film has a two-layer structure of a first silicon thin film and a second silicon thin film stacked one on top of the other. The first and second silicon thin films enable microscopic openings to be made in them. Stacking the first and second silicon thin films one on top of the other makes it possible to achieve the necessary strength and increase the strength of the stencil mask.

REFERENCES:
patent: 6770402 (2004-08-01), Suguro et al.
patent: 7094612 (2006-08-01), Shibata et al.
patent: 2002/0058400 (2002-05-01), Suguro et al.
patent: 5-216216 (1993-08-01), None
patent: 2001-237072 (2001-08-01), None
patent: 2002-203806 (2002-07-01), None
patent: 2002-343710 (2002-11-01), None
patent: 2003-37055 (2003-02-01), None
patent: 2003-133218 (2003-05-01), None
patent: 2003-151890 (2003-05-01), None
Notification of Reasons for Rejection mailed Jul. 5, 2005, issued by the Japanese Patent Office in counterpart Japanese Application No. 2002-376212 and English translation thereof.
Notification for Filing Opinion mailed Nov. 26, 2005, issued by the Korean Patent Office in counterpart Application No. 10-2003-97297 and English language translation thereof.

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