Method of depositing fully reacted titanium disilicide thin film

Details Method of depositing fully reacted titanium disilicide thin film Method of depositing fully reacted titanium disilicide thin film

1984-08-20

1985-07-02

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192R, 204192S, C23C 1500

Patent

active

045266654

ABSTRACT:
The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.

REFERENCES:
patent: 4218291 (1980-08-01), Fukuyama et al.
patent: 4322453 (1982-03-01), Miller
patent: 4348263 (1982-09-01), Draper et al.
patent: 4424101 (1984-01-01), Nowicki
patent: 4466875 (1984-08-01), Gillery
patent: 4468308 (1984-08-01), Scovell et al.
Angilello et al., J. Elect. Mater. 10, (1981), #1, pp. 59-93.

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